2023

n D. J. Cai, H. Chen, Q. C. Zhou, Y. Tang, Z. F. Lin, X. H. Chen, 一种MXene金属纳米复合材料、制备方法及应用(A preparatin method and applications of MXene metal nanocomposite material), China Invention Patent No. ZL202110651786.3 (2023).

2021

n D. J. Cai, S. Q. Lu, Z. B. Zhong, J. K. Lee, S. P. Li, 一种用于氮化物半导体材料除氢激活的装置 (An equipment for hydrogen removal activation in nitride semiconductors),China Invention Patent No. ZL202010864102.3 (2021).

n D. J. Cai, Y. Zhao, H. Chen, X. H. Chen, 一种制备有机发光材料包裹金属纳米线的复合材料及其制备方法, China Invention Patent No. ZL202010889666.2 (2021).

2020

n D. J. Cai, G. Z. Liu, B. Guo, X. H. Chen, 一种电场和/或磁场调控合成二维材料的装置和方法(A method and equipment for modulated synthesis of 2D materials with electric/magnetic fields), China Invention Patent No. 202010455859.7 (2020).

n D. J. Cai, Y. J. Wang, G. Z. Liu, Z. R. Hao, 一种富氮气氛增强氮化硼薄膜p型导电掺杂的方法(A method for enhancing p-type conductivity doping of BN film), China Invention Patent ZL201811339108.8 (2020).

n D. J. Cai, G. Z. Liu, Y. J. Wang, 色温可调的无荧光粉单芯片白光LED器件及制造方法 (A method for phosphor-free and color-temperature-tunable single chip LEDs ), , China Invention Patent ZL201910611191.8 (2020).

n D. J. Cai, G. Z. Liu, Y. J. Wang, 一种金属纳米线核壳结构的制备方法 (A method for fabrication of core-shell metal nanowires), China Invention Patent ZL201910709300.X (2020).

n D. J. Cai, Z. X. Huang, J. Wang, 一种纳米材料液相连续合成的技术 (A method for continuous synthesis of nanomaterials in solution), China Invention Patent No. ZL201810588079.2 (2020).

2019

n D. J. Cai, J. Wang, Y. Zhao, 一种变功函数广谱透明欧姆电极的制备方法 (A method for achieving wide-band transparent ohmic electrodes with tenability of work-functions), China Invention Patent No.201910167765.7 (2019).

n D. J. Cai, G. Z. Liu, Z. R. Hao, H. Y. Chen, F. P. Sun, 一种二维超薄LED及其制备方法(A method for 2D ultrathin LED construction and its fabrication),China Invention Patent No. ZL201810186373.0 (2019).

n D. J. Cai, Y. Y. Huang, and H. C. Wang, 一种金属纳米线的透明薄膜LED调光器制备方法 (Fabrication method of transparent LED dimmer film with metal nanowires), China Invention Patent No. ZL201611211603.1 (2019).

n D. J. Cai, F. P. Sun, and A. M. Soomro, 一种透明柔性的压电式纳米发电机的制备方法 (Fabrication Method for flexible transparent piezoelectric nanogenerator), China Invention Patent No. ZL201710154030.1 (2019).

n D. J. Cai, F. P. Sun, and A. M. Soomro, 一种衬底上直接生长氧化锌纳米柱阵列的方法 (Method for direct growth of ZnO nanorod array on arbitary substrate), China Invention Patent No. ZL 201710154036.9 (2019).

2018

n D. J. Cai, J. Wang, Y. P. Wang, 一种制备半导体包裹金属纳米线的方法 (A method for encapsulation of semiconductor shell on Cu nanowires), China Invention Patent No. 201811511371.0 (2018).

n D. J. Cai, S. Q. Lu, Z. B. Zhong, J. K. Lee, S. P. Li, 一种氮化物半导体材料除氢激活提升p型导电性的方法(A method for hydrogen removal and improvement of p-type conductivity in nitride semiconductors), China Invention Patent No. 201810298037.5 (2018).

n D. J. Cai, 一种彩色轻质导电纺织线的制作方法 (Fabrication method for color light-weight conductive threads), China Invention Patent No. ZL 201610843658.8 (2018).

2017

n D. J. Cai, Z. R. Hao, F. P. Sun, Y. J. Wang 一种二维六方氮化硼薄膜掺杂获得p型电导的方法 (Method on p-type conductivity of 2D h-BN layer by modulation doping),China Invention Patent No. 201711485913.7 (2017).

n D. J. Cai, C. P. Wu, A. M. Soomro, and J. Y. Kang, 一种在基底上制备晶片级大尺寸六方氮化硼的方法 (Method for growth of wafer-scale hexagonal BN monolayer), China Invention Patent No. ZL201510039073.6 (2017).

n D. J. Cai, H. C. Wang, N. Lin, H. M. Xu, C. P. Wu, J. Ma, H. Z. Guo, and J. Y. Kang, 一种合金包裹铜纳米线制备多功能核壳纳米材料的方法(Coating technique of alloy on Cu nanowires for multifunctional core-shell nanostructures), China Invention Patent No. ZL201510385468.1 (2017).

2016

n D. J. Cai, A. M. Soomro, and C. P. Wu, H. M. Xu 一种直接在Si衬底上生长六方氮化硼二维薄膜的方法 (Method for direct growth of hexagonal BN 2D film on Si substrate), China Invention Patent  ZL201410500423.X (2016).

n D. J. Cai, H. M. Xu, Y. P. Wu, N. Lin and H. Z. Guo, 一种石墨烯碳膜包裹的铜纳米丝网络的制备方法 (Synthesis of Cu nanosilk networks capsulated by Graphene), China Invention Patent No. ZL201410327046.4 (2016).

2015

n D. J. Cai, X. H. Chen and J. Y. Kang, 一种陡峭界面GaN/AlGaN超晶格的制备方法 (A scheme to fabricate abrupt GaN/AlGaN superlattices), China Invention Patent No. ZL201310030135.8 (2015).

2014

n D. J. Cai, N. Lin and J. J. Wu, 利用应力梯度分离氮化物自支撑衬底的方法 (Self-release of nitride free-standing substrate by graded strain), China Invention Patent No. 201410208201.0 (2014).

2013

n D. L. Peng, H. Z. Guo, and D. J. Cai, 金属纳米丝透明欧姆电极的压印方法 (Imprint method of transparent Ohmic electrode with metal nanosilks), China Invention Patent No. 201310373675.6 (2013).

n J. Y. Kang, K. Y. Li, D. J. Cai et al., 一种纳米结构量子态电注入发光测试方法 (Luminescence measurement for quantized states in nanostructures by electrical injection), China Invention Patent No. ZL201210026594.4 (2013).

2009

n D. J. Cai, F. C. Xu and J. Y. Kang, 纳米级高分辨应力测量方法 (Nano-scale Strain Measurement and Technique), China Invention Patent No. 200510078721.5 (2009).