1.Fabrication of high-voltage flip chip deep ultraviolet light-emitting diodes using an inclined sidewalls structure, Phys. Status Solidi A (2019) 1900059. 2.The construction of integrated Si-based micro proton exchange membrane fuel cells with improved performances, Nano Energy 61 (2019) 604. 3.Integral monolayer-scale featured digital-alloyed AlN/GaN superlattices using hierarchical growth units,Cryst. Growth Des. 19(3) (2019) 1720. 4.Analysis and Reduction of Obtuse Triangular Defects on 150-mm 4A degrees 4H-SiC Epitaxial Wafers, J. Electronic Materials 47(9) (2018) 5109. 5.In-plane Anisotropy of Quantum Transport in Artificial Two-dimensional Au Lattices, Nano Lett. 18(3) (2018) 1724. 6.Characteristics of InN epilayers grown with H2-assistance, AIP Advances 7 (2017) 115207. 7.Interfaces between hexagonal andcubic oxides and their structurealternatives, Nature Com. 8 (2017) 1474. 8.Abnormal radiative interband transitions in high-Al-content AlGaN quantum wells induced by polarized orbitals, ACS Photonics, 4 (2017) 2197. 9.Effect of electrical injection-induced stress on interband transitions in high Al content AlGaN MQWs, RSC Adv., 7 (2017) 55157. 10.Effect of Surface Morphology and Magnetic Impurities on theElectronic Structure in Cobalt-Doped BaFe2As2Superconductors, Nano Lett. 17 (2017) 1642. 11.Reduction of epitaxial defects on 4o-off 4H-SiC homoepitaxial growth by optimizing in-situ etching process, Superlattices and Microstructures 99 (2016) 145. 12.Improved p-type conductivity in Al-rich AlGaN using multidimensional Mg-doped superlattices, Scientific Reports 6 (2016) 21897. 13.Effects of nitrogen dopants on the atomic step kinetics and electronic structures of O-polar ZnO, Nanoscale, 2016, 8, 4381. 14.Effects of thermally-induced changes of Cu grainson domain structure and electrical performanceof CVD-grown grapheme,Nanoscale8 (2016) 930. 15.Direct Observation of the Biaxial Stress Effect on Efficiency Droop in GaN-based Light-emitting Diode under Electrical Injection, Scientific Reports 5 (2015) 17227. 16.Ultrawide photoresponse in ZnO/ZnSe coaxialnanowires with a threshold of 0.8 eV, International Journal of Hydrogen Energy 40 (2015) 10788. 17.Electro-optic Coefficient Enhancement of AlxGa1−xN via Multiple FieldModulations, ACS Appl. Mater. Interfaces 2015, 7, 17707. 18.Novel Evolution Process of Zn-Induced Nanoclusters on Si(111)-(7´7) Surface, Nano-Micro Lett. 7(2) (2015)194. 19.Performance evaluation of multi-junction solarcells by spatially resolved electroluminescencemicroscopy, Nanoscale Research Letters10 (2015) 40. 20.Beneficial effect of alloy disorder on the conversionefficiency of ZnO/ZnxCd1-xSe coaxial nanowiresolar cells, J. Mater. Chem. A 3 (2015) 6360. 21.High Performance 3D Si/Ge Nanorods Array Anode Buffered by TiN/Ti Interlayer for Sodium-Ion Batteries, Adv. Funct. Mater. 25 (2015) 1386-1392. 22.Quantum state engineering with ultra-short-period (AlN)m/(GaN)n superlattices for narrowband deep-ultraviolet detection,Nanoscale 6 (2014) 14733. 23.Two-dimensional Au lattices featuring uniquecarrier transport preference and wide forbiddengap, Nanoscale 6 (2014) 10118.A beyond near-infrared response in awide-bandgap ZnO/ZnSe coaxial nanowiresolar cell by pseudomorphic layers, J. Mater. Chem. A 2 (2014) 14571. 24.High density GaN/AlN quantum dots fordeep UV LED with high quantumefficiency and temperature stability, Scientific Reports 4 (2014)5166. 25.Top- and bottom-emission-enhanced electroluminescence of deep-UV light-emitting diodes induced by localised surface plasmons, Scientific Reports, 4 (2014)4380. 26.High Mg effective incorporation in Al-richAlxGa1-xN by periodic repetition of ultimate V/IIIratio conditions, Nanoscale Research Letters 9(1) (2014) 40. 27.The InN epitaxy via controlling In bilayer, Nanoscale Research Letters 9(1) (2014) 5. 28.Enhanced reversible lithium storage in germanium nano-island coated 3D hexagonal bottle-like Si nanorod arrays,Nanoscale, 6 (3) (2014) 1817. 29.Vacuum Rabi splitting of exciton-polariton emission in an AlN film, Scientific Reports, 3 (2013) 3551. 30.Crystal structure evolution of individual graphene islands during CVD growth on copper foil, Adv. Mater. 25 (2013) 6744. 31.Copper nanowires as fully transparent conductive electrodes, Scientific Reports, 3 (2013) 2323 32.Defect Suppression in AlN Epilayer Using Hierarchical Growth Units, J. Phys. Chem. C 117 (2013) 14158. 33.Optical isotropization of anisotropic wurtzite Al-rich AlGaN via asymmetric modulation with ultrathin (GaN)m/(AlN)nsuperlattices, Laser and Photonics Rev. 7(4) (2013) 572. 34.Propagation and enhancement of ultraviolet radiation in metal-dielectricnanocables assisted by surface plasmon polaritons, Appl. Phys. Lett. 102 (2013) 171601. 35.Type-II Core/Shell Nanowire Heterostructuresand Their Photovoltaic Applications, Nano-Micro Lett. 4(3) (2012) 135. 36.The band edge emission enhancement by the quadrupole surface plasmon-exciton coupling using direct-contact Ag/ZnO nanospheres, Nanoscale, 5 (2012) 574. 37.Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaNmulti-quantum wells, Scientific Reports 2 (2012) 816. 38.Tuning the dopingtype and level of graphene with different gold configurations, Small 8(20) (2012) 3129. 39.Kinetic behavior of nitrogen penetration into indium double layer improving the smoothness of InN film, J. Appl. Phys. 111 (2012) 113528. 40.Kinetic-dynamic properties of different monomers and two-dimensional homoepitaxy growth on the Zn-polar (0001) ZnO surface, Crystal Growth & Design, 12(6) (2012) 2850. 41.Ohmic contact to n-AlGaN through bonding state transition at TiAl interface, J. Appl. Phys. 111 (2012) 113710. 42.Thermal Conductivity of Isotopically Modified Graphene, Nature Mater., 11(3) (2012) 203. 43.Synthesis and characterization of large-area graphene and graphite films on commercial Cu-Ni alloy foils, Nano Lett. 11(9), (2011), 3519. 44.Structural properties of InN films grown in different conditions by metalorganic vapor phase epitaxy, J. Mat. Res. 26(6) (2011) 775. 45.An all inorganic type II heterojunction solar cell based on a ZnO/ZnSe core/shell nanowire array with nearly full spectral response, J. Mat. Chem. 21(16) (2011) 6020. 46.Raman measurements of thermal transport in suspended monolayer graphene of variable sizes in vacuum and gaseous environments, ACS Nano,5(1) (2011) 321. 47.Atomic structure and formation mechanism of identicallysized Au clusters grown on Si (111)-(7×7) surface, J. Chem. Phys. 133 (2010) 124706. 48.Growth kinetic processes of AlN molecules on the Al-polar surface of AlN, J. Phys. Chem. A114 (2010) 9028. 49.Growth and characterization of type-II ZnO/ZnSe core/shell nanowire arrays, J. Mater. Res. 25(7) (2010) 1272. 50.Optical anisotropy of AlN epilayer on sapphire substrate investigated byvariable-angle spectroscopic ellipsometry, Opt. Mater. 32 (2010) 891. 51.Origins and suppressions of parasitic emissions in ultravioletlight-emitting diode structures, J. Mater. Res., 25(6)(2010) 1037. 52.Near-ultraviolet light emitting diodes using strained ultrathin InN/GaN quantum well grown by metal organic vapor phase epitaxy, Appl. Phys. Lett. 96 (2010)101115. 53.Initial stages of Mg adsorption on the Si (111)7X7 surface, J. Appl. Phys. 107 (2) (2010) 023505. 54.Non-contact nanoscale electrical measurements for embedded intrinsic charges by Auger electron spectroscopy, Nanotechnology 21(1) (2010) 015707. 55.Polarization effects on quantum levels in InN/GaN quantum wells, Nanotechnology 20(48) (2009) 485204. 56.Enhancement of p-type conductivity by modifying the internal electric field in Mg- and Si-δ-codoped AlxGa1-xN/AlyGa1-yN superlattices, Appl. Phys. Lett. 95(15) (2009), 151113. 57.Hierarchical lattice structure andformation mechanism of ZnOnano-tetrapods, Nanotechnology 20 (2009) 325709. 58.Band engineering in strained GaN/ultrathin InN/GaN quantum wells, Crystal Growth & Design 9(4) (2009) 1698. 59.Structural and electronic properties of identical-size Zn nanoclusters grown on Si(111)-(7×7) surfaces, J. Chem. Phys. 130 (2009) 024701. 60.Pressure induced wurtzite-to-zinc blende phase transition in ZnO at finite temperature, J. Mater. Res.,23 (2008)3347. 61.Enhancement in middle-ultraviolet emission in a surface-plasmon-assistedcoaxial nanocavity, Appl. Phys. Lett. 93(9) (2008) 091902. 62.Band-edge emission enhancement by longitudinal stress field in GaN, Appl. Phys. Lett. 93(8) (2008) 081908. 63.Au-induced charge redistribution on Si (111)-7x7 surface, Surf. Sci. 602(2) (2008) 638. 64.Quantized level transitions and modification in InGaN/GaN multiplequantum wells, Appl. Phys. Lett. 92(10) (2008) 101929. 65.Phase identification from electronic structures by Augerelectron spectroscopy, J. Mater. Res. 23 (1)(2008) 83. 66.Band engineering in Al0.5Ga0.5N/GaN superlattice by modulating Mg dopant, Appl. Phys. Lett. 91 (15) (2007) 152106. 67.Phase transition of ultrathin AlN interlayer at AlGaN/GaN interface, Appl. Phys. Lett. 90 (12) (2007) 121909. 68.Thickness-dependent phase transition of AlxGa1-xN thin films on strained GaN,J. Phys. Chem. B 110 (2006) 10396. 69.Aligned Zn-Zn2SiO4core-shell nanocables with homogenously intense ultraviolet emission at 300 nm, J. Phys. Chem. B 109 (2005) 15786. 70.High-spatial-resolution strain measurements by Auger electron spectroscopy in epitaxial-lateral-overgrowth GaN,Appl. Phys. Lett. 86 (2005) 211917. 71.Polarization effect on p-type doping efficiency in Mg- and Si-codoped wurtzite GaN from first-principles calculations, Phys. Rev. B71(3) (2005) 035216. 72.Layer structures under in-plane compressive strains in AlxGa1-xN/AlN interfaces, Phys. Rev. B 68 (7) (2003) 073305. 73.Dislocations around precipitates in AlGaN epilayers, J. Mater. Res. 17 (8) (2002) 2007. 74.Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers,Mater. Sci. & Eng. B 91-92 (2002) 303. 75.Threading dislocations with edge components in GaN epilayer grown on Al2O3substrates,J. Mater. Res. 16 (9) (2001) 2550. 76.Nanopipes in undoped AlGaN epilayers, J. Crystal Growth 229 (2001) 58. 77.Ultraviolet absorption spectra of amphoteric SnO2nanocrystallites, Appl. Sur. Sci.174(2001)306. 78.Laplace defect spectroscopy for recognition of deep level fine structures, J. Crystal Growth 210 (2000) 247. 79.Lattice images of dislocations with edge components in GaN epilayers grown on Al2O3substrates, J. Crystal Growth 210 (2000) 157. 80.Precipitates in GaN epilayers grown on sapphire substrates, J. Mater. Res. 13 (1998) 2100. 81.Photoluminescence of undoped bulk InP grown by the liquid-encapsulated vertical Bridgman technique, J. Appl. Phys., 81 (1997) 905. 82.Misfit dislocations and stresses in GaN epilayers, Appl. Phys. Lett. 71 (1997) 2304-2306. 83.Influence of a high vertical magnetic field on Te dopant segregation in InSb grown by the vertical gradient freeze method, J. Crystal Growth 140 (1994) 435. 84.Effect of application of a magnetic field during crystal growth on the photoluminescence characteristics of Ge-doped liquid encapsulated Czochralski grown GaAs, J. Crystal Growth 135 (1994) 623. 85.The identification of Si donor states in AlxGa1-xAs by photoluminescence, J. Appl. Phys. 72 (1992) 1395. 86.Alloy random effect on the characteristics of DX center,Chinese Science Bulletin 34 (1989) 1258. 87. A multistate model for DX centers in AlxGa1-xAs alloy, J. Luminescence 40 & 41 (1988) 365. | 