III族氮化物半导体材料物理与应用

2000/09-2004/07厦门大学物理系，获学士学位；

2004/09-2010/12 厦门大学物理系凝聚态物理专业，获博士学位；

2009/09至今 厦门大学物理系任工程师。

国家高技术研究发展计划(863 计划)《高铝组分氮化物材料制备技术研究》

青年科学基金项目《深紫外AlGaN光学各向异性与自旋轨道调制研究》

1. C. Yue, Y. Yu, S. Sun, X. He, B. Chen, W. Lin, B. Xu, M. Zheng, S. Wu, J. Li, J. Kang, and L. Lin, “High Performance 3D Si/Ge Nanorods Array Anode Buffered by TiN/Ti Interlayer for Sodium-Ion Batteries,” Adv. Funct. Mater., 2015.

2. C. Zhou, Y. Wu, X. Chen, W. Lin, Y. Zhou, J. Kang, and H. Zhu, “Novel Evolution Process of Zn-Induced Nanoclusters on Si(111)-(7×7) Surface,” Nano-Micro Lett., 2015.

3. N. Gao, W. Lin, X. Chen, K. Huang, S. Li, J. Li, H. Chen, X. Yang, L. Ji, E. Yu, and J. Kang, “Quantum state engineering with ultra-short-period (AlN)m/(GaN)n superlattices for narrowband deep-ultraviolet detection,” Nanoscale, Oct. 2014.

4. N. Gao, W. Lin, X. Chen, K. Huang, S. Li, J. Li, H. Chen, X. Yang, L. Ji, E. T. Yu, and J. Kang, “Quantum state engineering with ultra-short-period (AlN) m /(GaN) n superlattices for narrowband deep-ultraviolet detection,” Nanoscale, vol. 6, pp. 14733–14739, 2014.

5. Y. Yu, C. Yue, S. Sun, W. Lin, H. Su, B. Xu, J. Li, S. Wu, J. Li, and J. Kang, “The E ff ects of Di ff erent Core−Shell Structures on the Electrochemical Performances of Si−Ge Nanorod Arrays as Anodes for Micro-Lithium Ion Batteries,”2014.

6. T. Zheng, W. Lin, D. Cai, W. Yang, W. Jiang, H. Chen, J. Li, S. Li, and J. Kang, “High Mg effective incorporation in Al-rich AlxGa1 - xN by periodic repetition of ultimate V/III ratio conditions.,”Nanoscale Res. Lett., vol. 9, no. 1, p. 40, Jan. 2014.

7. X. Zhuo, J. Ni, J. Li, W. Lin, D. Cai, S. Li, and J. Kang, “Band engineering of GaN/AlN quantum wells by Si dopants,” J. Appl. Phys., vol. 115, no. 12, p. 124305, Mar. 2014.

8. X. Zhuo, J. Ni, J. Li, W. Lin, D. Cai, S. Li, and J. Kang, “Band engineering of GaN/AlN quantum wells by Si dopants,” J. Appl. Phys., vol. 115, 2014.

9. J. Li, C. Yue, Y. Yu, Y.-S. Chui, J. Yin, Z. Wu, C. Wang, Y. Zang, W. Lin, J. Li, S. Wu, and Q. Wu, “Si/Ge core–shell nanoarrays as the anode material for 3D lithium ion batteries,” J. Mater. Chem. A, vol. 1, no. 45, p. 14344, 2013.

10. W. Lin, W. Jiang, N. Gao, D. Cai, S. Li, and J. Kang, “Optical isotropization of anisotropic wurtzite Al-rich AlGaN via asymmetric modulation with ultrathin (GaN) m /(AlN) n superlattices,”Laser Photon. Rev., vol. 7, no. 4, pp. 572–579, Jul. 2013.

11. W. Yang, J. Li, W. Lin, S. Li, H. Chen, D. Liu, X. Yang, and J. Kang, “Control of two-dimensional growth of AlN and high Al-content AlGaN-based MQWs for deep-UV LEDs,” AIP Adv., vol. 3, no. 5, p. 052103, 2013.

12. Q. Zhuang, W. Lin, W. Yang, W. Yang, C. Huang, J. Li, H. Chen, S. Li, and J. Kang, “Defect Suppression in AlN Epilayer Using Hierarchical Growth Units,” J. Phys. Chem. C, vol. 117, no. 27, pp. 14158–14164, Jul. 2013.

13. B. Zhang, W. Lin, S. Li, Y. Zheng, X. Yang, D. Cai, and J. Kang, “Ohmic contact to n-AlGaN through bonding state transition at TiAl interface,” J. Appl. Phys., vol. 111, no. 11, p. 113710, 2012.

14. X. Wang, S. Chen, W. Lin, S. Li, H. Chen, D. Liu, and J. Kang, “Structural properties of InN films grown in different conditions by metalorganic vapor phase epitaxy,” J. Mater. Res., vol. 26, no. 06, pp. 775–780, Mar. 2011.

15. W. Jiang, W. Lin, S. Li, J. Chen, and J. Kang, “Optical anisotropy of AlN epilayer on sapphire substrate investigated by variable-angle spectroscopic ellipsometry,” Opt. Mater. (Amst)., vol. 32, no. 9, pp. 891–895, Jul. 2010.

16. W. Lin, S. Li, and J. Kang, “Near-ultraviolet light emitting diodes using strained ultrathin InN/GaN quantum well grown by metal organic vapor phase epitaxy,” Appl. Phys. Lett., vol. 96, no. 10, p. 101115, 2010.

17. S. Chen, W. Lin, S. Li, and J. Kang, “Electronic Structures of InN/GaN Quantum Dots,” J. Nanosci. Nanotechnol., vol. 9, no. 2, pp. 1226–1228, 2009.

18. J. Li, W. Lin, W. Yang, W. Cai, Q. Pan, X. Lin, S. Li, H. Chen, D. Liu, and J. Cai, “Design and epitaxy of structural III-nitrides,” J. Cryst. Growth, vol. 311, no. 3, pp. 478–481, Jan. 2009.

19. W. Lin, D. Benjamin, S. Li, T. Sekiguchi, S. Ito, and J. Kang, “Band Engineering in Strained GaN/ultrathin InN/GaN Quantum Wells,” Cryst. Growth Des., vol. 9, no. 4, pp. 1698–1701, Apr. 2009.

20. W. Lin, S. Li, and J. Kang, “Polarization effects on quantum levels in InN/GaN quantum wells.,”Nanotechnology, vol. 20, no. 48, p. 485204, Dec. 2009.

21. Q. Zhuang, W. Lin, and J. Kang, “Effect of In-Adlayer on AlN (0001) and (000−1) Polar Surfaces,” J. Phys. Chem. C, vol. 113, no. 23, pp. 10185–10188, Jun. 2009.