基于III族氮化物半导体材料的大功率LED、深紫外LED和日盲探测器

2003至今，厦门大学物理系，工程师；

2009-2012，厦门大学物理系，硕士；

1999-2003，厦门大学物理系，学士

1. 深紫外LED外延生长及应用技术研究 （“十二五”863重大项目，2011-2013，参与）

2. 铁磁岛纳米晶格中的人工几何磁阻挫（ 国家自然科学基金面上项目，2010-2012，参与

1. J. C. Li, W. H. Yang, S. P. Li, H. Y. Chen,D. Y. Liu, and J. Y. Kang, “Enhancement of p-type conductivity by modifying the internal electric field in Mg- and Si-d-codoped Al_xGa_1-xN/Al_yGa_1-yN superlattices”, Applied Physics Letters, 95, 151113-1-151113-3, October, 2009.

2. P. Chen, X. G. Tu, S. P. Li, J. C. Li, W. Lin, H. Y. Chen, D. Y. Liu, J. Y. Kang, Y. H. Zuo, L. Zhao, S. W. Chen, Y. D. Yu, J. Z. Yu, and Q. M. Wang, “Enhanced Pockels effect in GaN/AlxGa1−xN superlattice measured by polarization-maintaining fiber Mach-Zehnder interferometer”, Applied Physics Letters, 91 (3), 031103-1-031103-3, July, 2007.

3. D. J. Cai, F. C. Xu, J. C. Li, H. Y. Chen, and J. Y. Kang, “Non-contact electrical detection of intrinsic local charge and internal electric field at nanointerfaces”, Nanotechnology, 21, 015707-1-015707-6, January, 2010

4. J. C. Li, W. Lin, W. H. Yang, W. Z. Cai, Q. F. Pan, X. J. Lin, S. P. Li, H. Y. Chen, D. Y. Liu, J. F. Cai, X. Yu, and J. Y. Kang, “Design and epitaxy of structural III-nitrides”, Journal of Crystal Growth, 311(3), 478-481, January, 2009.

5. S. P. Li, Z. L. Fang, H. Y. Chen, J. C. Li, X. H. Chen, X. L. Yuan, S. Takashi, Q. M. Wang, and J. Y. Kang, “Defect influence on luminescence efficiency of GaN-based LEDs”, Materials science in semiconductor processing, 9 (1-3), 371-374, March, 2006.

1.发明专利：选择超晶格位置掺杂的p型III族氮化物材料的制备方法．专利号：200810071176.0.发明人：康俊勇，李金钗，李书平，杨伟煌，陈航洋，刘达艺