Interface modification of high indium content InGaN/GaN quantum wells was carried out by Mg pre- treatment of the GaN barrier surface. The indium in the Mg-pretreated InGaN layer was homogeneously dis- tributed, making the interfaces abrupt. The improved interface quality greatly enhanced light emission capacity. The cathodoluminescence intensity of the Mg-pretreated InGaN/GaN quantum wells was correspondingly much stronger than those of the InGaN/GaN quantum wells without Mg pretreatment.
