High Stability Induced by the TiN/Ti Interlayer...... lushiqiang 周三, 08/31/2016 - 13:57 学术动态 论文 所属研究小组 三 High Stability Induced by the TiN:Ti Interlayer in Three-Dimensional Si:Ge Nanorod Arrays as Anode in Micro Lithium Ion Battery.pdf 论文作者 Chuang Yue,†,∥ Yingjian Yu,† Zhenguo Wu,‡ Shibo Sun,† Xu He,† Juntao Li,‡ Libo Zhao,§ Suntao Wu,† Jing Li,*,†,§,∥ Junyong Kang,† and Liwei Lin∥ 刊物名称 ACS Appl. Mater. Interfaces JCR分区 一区 论文摘要 Three-dimensional (3D) Si/Ge-based micro/nano bat-teries are promising lab-on-chip power supply sources because of thegood process compatibility with integrated circuits and Micro/Nano- Electro-Mechanical System technologies. In this work, the effective interlayer of TiN/Ti thin films were introduced to coat around the 3D Sinanorod (NR) arrays before the amorphous Ge layer deposition as anodein micro/nano lithium ion batteries, thus the superior cycling stability wasrealized by reason for the restriction of Si activation in this unique 3D matchlike Si/TiN/Ti/Ge NR array electrode. Moreover, the volume expansion properties after the repeated lithium-ion insertion/extractionwere experimentally investigated to evidence the superior stability of thisunique multilayered Si composite electrode. The demonstration of this wafer-scale, cost-effective, and Si-compatible fabrication for anodes in Li-ion micro/nano batteries provides new routes to configurate moreefficient 3D energy storage systems for micro/nano smart semiconductor devices.