The AlGaN-based deep-UV LEDs with specific design of varied superlattice barrier electron blocking layer (EBL) has been investigated numerically by APSYS soft- ware. The proposed structure exhibits significant improvement in the light output power, internal quantum efficiency, current–voltage curve and electroluminescence intensity. After analyzing the profiles of energy band dia- grams, carriers concentration and radiative recombination rate, we find the main advantages of proposed structure are ascribed to higher barrier suppressing electron leakage and reduced barrier for hole injection. Thus, compared with reference sample, the proposed EBL design may be a good method for improving the whole performance of UV LEDs.
